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APTM20HM16FT
Full - Bridge MOSFET Power Module
VBUS Q1 Q3
VDSS = 200V RDSon = 16mW max @ Tj = 25C ID = 104A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies
G1 S1 Q2 OUT1 OUT2 Q4
G3 S3
G2 S2 NTC1 0/VBU S NTC2
G4 S4
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile
G3 S3
G4 S4
OUT2
VBUS
0/VBUS
OUT1
S1 G1
S2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 200 104 77 416 30 16 390 100 50 3000 Unit V A V mW W A mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-6
APTM20HM16FT - Rev 1
May, 2004
Tc = 25C
APTM20HM16FT
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A
VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V
Min 200 Tj = 25C Tj = 125C 3
Typ
Max 250 1000 16 5 100
Unit V A mW V nA
VGS = 10V, ID = 52A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID =104A Inductive switching @ 125C VGS = 15V VBus = 133V ID = 104A RG = 5 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 104A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 104A, RG = 5 Min Typ 7220 2330 146 140 53 67 32 64 88 116 849 929 936 986 J J ns Max Unit pF
nC
Source - Drain diode ratings and characteristics
Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery w trr Qrr Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25C Tc = 80C VGS = 0V, IS = - 104A IS = - 104A VR = 133V diS/dt = 100A/s IS = - 104A VR = 133V diS/dt = 100A/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 0.9 3.4 Min Typ Max 104 77 1.3 5 230 450 Unit A V V/ns ns
May, 2004 2-6 APTM20HM16FT - Rev 1
C
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR VDSS Tj 150C IS - 104A di/dt 700A/s
APT website - http://www.advancedpower.com
APTM20HM16FT
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min 2500 -40 -40 -40
Typ
Max 0.32 150 125 100 4.7 160
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To Heatsink
M5
Temperature sensor NTC
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K
RT = e ae1 1 ou T: Thermistor temperature exp e B25 / 85 c c T - T /u RT: Thermistor value at T / e 25 ou e R 25
Min
Typ 68 4080
Max
Unit kW K
Package outline
APT website - http://www.advancedpower.com
3-6
APTM20HM16FT - Rev 1
May, 2004
APTM20HM16FT
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.9 0.7 0.5
0.05 0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics
VGS=15V
350 300 ID, Drain Current (A) 250 200 150 100 50 0
Transfert Characteristics 300 ID, Drain Current (A) 250 200 150 100 50 0
TJ=25C TJ=125C TJ=-55C VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
10V 9V 8.5V 8V 7.5V 7V 6.5V
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A)
Normalized to VGS=10V @ 52A
1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 120 100 80 60 40 20 0
1.1 1
VGS=10V
VGS=20V
0.9 0.8 0 25 50 75 100 125 150 ID, Drain Current (A)
25
50
75
100
125
150
May, 2004 4-6 APTM20HM16FT - Rev 1
TC, Case Temperature (C)
APT website - http://www.advancedpower.com
APTM20HM16FT
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 52A
1000
limited by RDSon
100
100s
10 Single pulse TJ=150C 1 1
1ms 10ms 100ms
10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 ID=104A VDS=40V 12 TJ=25C 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC)
May, 2004
VDS=100V
10000
Ciss Coss
VDS=160V
1000 Crss 100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
APT website - http://www.advancedpower.com
5-6
APTM20HM16FT - Rev 1
APTM20HM16FT
Delay Times vs Current 120 100 td(on) and td(off) (ns) 80 60 40 20 0 0 25 50 75 100 125 150 175 ID, Drain Current (A)
VDS=133V RG=5 TJ=125C L=100H
Rise and Fall times vs Current 160 140
VDS=133V RG=5 TJ=125C L=100H
td(off) tr and tf (ns)
120 100 80 60 40 20 0 0
tf
td(on)
tr
25
50 75 100 125 150 175 ID, Drain Current (A)
Switching Energy vs Current 2 Switching Energy (mJ) 1.5 1 0.5 0 0 25 50 75 100 125 150 175 ID, Drain Current (A) Operating Frequency vs Drain Current
VDS=133V D=50% RG=5 TJ=125C VDS=133V RG=5 TJ=125C L=100H
Switching Energy vs Gate Resistance 3
VDS=133V ID=104A TJ=125C L=100H
Eoff
Eon and Eoff (mJ)
2.5 2 1.5 1 0.5 0
Eoff
Eon
Eon
5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000 TJ=150C
300 250 Frequency (kHz) 200 150 100 50 0 25 38 50 63 75 88 100 ID, Drain Current (A)
100
TJ=25C 10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
May, 2004
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
6-6
APTM20HM16FT - Rev 1

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